ksc815 0.2a , 60v npn plastic-encapsulated transistor elektronische bauelemente 26-dec-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features low collector current complementary to ksa539 low frequency amplifier & high frequency oscillator classification of h fe absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 45 v emitter to base voltage v ebo 5 v collector current - continuous i c 200 ma collector power dissipation p c 400 mw thermal resistance from junction to ambient r ja 312 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 60 - - v i c =0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 45 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =0.01ma, i c =0 collector cut C off current i cbo - - 0.1 a v cb =45v, i e =0 emitter cut C off current i ebo - - 0.1 a v eb =3v, i c =0 dc current gain h fe 40 - 400 v ce =1v, i c =50ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =150ma, i b =15ma base to emitter saturation voltage v be(sat) - - 1.1 v i c =150ma, i b =15ma base to emitter voltage v be 0.6 - 0.9 v v ce =10v, i c =10ma collector output capacitance c ob - 4 - pf v cb =10v, i e =0, f=1mhz transition frequency f t 100 - - mhz v ce =10v, i c =10ma product-rank ksc815-r KSC815-O ksc815-y ksc815-g range 40~80 70~140 120~240 200~400 ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76 1 11 1 emitter 2 22 2 base 3 33 3 collector to - 92 2 base 1 emitter collector 3
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